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RF2132
0
RoHS Compliant & Pb-Free Product Typical Applications * 4.8V AMPS Cellular Handsets * 4.8V CDMA/AMPS Handsets * 4.8V JCDMA/TACS Handsets Product Description
The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 4-cell CDMA/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 800MHz to 950MHz band. The device is self-contained with 50 input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics over varying supply and control voltages.
-A0.158 0.150 0.021 0.014 0.009 0.004
LINEAR POWER AMPLIFIER
* Driver Amplifier in Cellular Base Stations * Portable Battery-Powered Equipment
0.392 0.386
0.069 0.064
0.050
0.244 0.230 8 MAX 0 MIN 0.010 0.008
0.060 0.054
0.035 0.016
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS
Package Style: Standard Batwing
Features * Single 4.2V to 5.0V Supply * Up to 29 dBm Linear Output Power
VCC 1 NC 2 RF IN 3 GND 4 GND 5 GND 6 GND 7 PC 8
16 GND 15 RF OUT 14 RF OUT 13 GND 12 GND 11 RF OUT 10 RF OUT 9 GND
* 29dB Gain With Analog Gain Control * 45% Linear Efficiency * On-board Power Down Mode * 800MHz to 950MHz Operation
BIAS
Ordering Information
RF2132 Linear Power Amplifier RF2132PCBA-41X Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev B10 060908
2-109
RF2132
Absolute Maximum Ratings Parameter
Supply Voltage (No RF) Supply Voltage (POUT<32dBm) Power Control Voltage (VPC) DC Supply Current Input RF Power Output Load VSWR Storage Temperature Junction Temperature
Rating
-0.5 to +8.0 -0.5 to +5.0 -0.5 to +5.0 or VCC 800 +12 10:1 -40 to +150 200
Unit
VDC VDC V mA dBm C C Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
Overall
Usable Frequency Range Linear Gain Total Linear Efficiency Efficiency at Max Output OFF Isolation Second Harmonic Maximum Linear Output Power Adjacent Channel Power Rejection @ 885 kHz Adjacent Channel Power Rejection @ 1.98 MHz Maximum CW Output Power Operating Case Temperature Ambient Operating Temperature Junction to Case Thermal Resistance Input VSWR Output Load VSWR
Specification
Min. Typ. Max.
Unit
Condition
T=25 C, VCC =4.8V, VPC =4.0V, Freq=824MHz to 849MHz
800 27 40 50 23
824 to 849 29 45 55 27 -30 28.5 -46
950 31
MHz dB % % dB dBc dBc
29 -44
-58 31.5 -30 -30 32
-56
dBc dBm C C C/W
VPC =0V,PIN =+6dBm Including Second Harmonic Trap IS-95A CDMA Modulation Pout = 28 dBm ACPR can be improved by trading off efficiency. Pout = 28 dBm
110 100 85 <2:1 10:1 100 10 0.5 Vcc 5.0 100 20
Pout = 31 dBm, Efficiency = 55%
No oscillations ns A V V V mA mA
Power Down
Turn On/Off Time Total Current VPC "OFF" Voltage VPC "ON" Voltage "OFF" State
0.2 3.6 4.2
4.0 4.8 40 15
Power Supply
Power Supply Voltage Idle Current Current into VPC pin Operating voltage VPC =4.0V "ON" State
2-110
Rev B10 060908
RF2132
Pin 1 Function VCC1 Description
Power supply for the driver stage, and interstage matching. Shunt inductance is required on this pin, which can be achieved by an inductor to VCC, with a decoupling capacitor on the VCC side. The value of the inductor is frequency dependent; 3.3nH is required for 830MHz, and 1.2nH for 950MHz. Instead of an inductor, a high impedance microstrip line can be used. Not Connected. RF input. This is a 50 input, but the actual input impedance depends on the interstage matching network connected to pin 1. An external DC blocking capacitor is required if this port is connected to a DC path to ground or a DC voltage. Ground connection. Keep traces physically short and connect immediately to the ground plane for best performance. Same as pin 4. Ground for stage 1. Keep traces physically short and connect immediately to ground plane for best performance. This ground should be isolated from the batwing and other ground contacts. See evaluation board layout. Same as pin 6. Power Control. When this pin is "low", all circuits are shut off. A "low" is typically 0.5V or less at room temperature. During normal operation this pin is the power control. Control range varies from about 2V for 0dBm to VCC for +31dBm RF output power. The maximum power that can be achieved depends on the actual output matching. PC should never exceed 5.0V or VCC, whichever is the lowest.
PC
Interface Schematic
VCC
RF IN From Bias Stages
2 3
NC RF IN
See pin 1.
4 5 6
GND GND GND
7 8
GND PC
To RF Transistors
9 10
GND RF OUT
Same as pin 4. RF Output and power supply for the output stage. The four output pins are combined, and bias voltage for the final stage is provided through these pins. The external path must be kept symmetric until combined to ensure stability. An external matching network is required to provide the optimum load impedance; see the application schematics for details. Same as pin 10. Same as pin 4. Same as pin 4. Same as pin 10. Same as pin 10. Same as pin 4. See pin 10. See pin 10.
RF OUT
From Bias Stages
11 12 13 14 15 16
RF OUT GND GND RF OUT RF OUT GND
See pin 10.
Rev B10 060908
2-111
RF2132
Application Schematic
VCC 1 nF Vcc = 4.8 V Vpc = 4.0 V
100 pF 1.8 nH 1 100 pF 2 3 4 5 18 k 6 BIAS 7 8 1 nF 11 10 9 12 pF 3.3 nH 100 pF RF OUT 4.3 pF 16 15 14 13 12 6.8 nH
100 pF RF IN 3 pF
VPC
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
Power supply filtering/bypassing for V cc Vcc = 4.8 V Vpc = 4.0 V C1 100 nF C2 11 F C3 1 F C4 1 nF C5 100 pF 1 C6 100 pF 2 3 4 5 6 7 P1-3 C12 3.3F C13 1 nF C14 100 pF 8 16 P1-3 15 14 13 12 11 10 9 C10 12 pF C11 4.3 pF L3 3.3 nH C7 3 pF L2 6.8 nH P1-1 P1 1 2 3 VCC GND PC
P1-1
Interstage tuning (L1) for centering output frequency C8 RF IN 33 pF J1
L1 1.8 nH
Bias inductor for the amplifier output stage Harmonic trap: C7 series resonate internal bondwires of pins 14 and 1 2f0 to effectively short out 2nd harm for optimum gain and efficiency C9 100 pF RF OUT J2
Adds bias to the first amplifier stage for improved linearity
R1 18 k
BIAS
Matching network for optimum load impedance
Power supply filtering/bypassing for V PC
2-112
Rev B10 060908
RF2132
Evaluation Board Layout 2" x 2"
Rev B10 060908
2-113
RF2132
RF2132 Evaluation Board Vcc = 4.8 V, Vpc = 4.0 V, Frequency = 836 MHz, IS-95A CDMA 90 80 70
ACPR 885 kHz ACPR (-dBc), Efficiency (%) 250 350
ACPR 1.98 MHz
300
60 50
Current 200 Current (mA)
40 30
150
100
20
Total Efficiency 50
10 0 28 26 24 22 20 18 16 14 12 10
0
Pout (dBm)
2-114
Rev B10 060908

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